Name: IRF60B217, Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
SKU: IRF60B217

N-канал 60V 60A (Tc) 83W (Tc) сквозное отверстие TO-220AB

Подробное описание

Вес и габариты
base product number	IRF60B217 ->
current - continuous drain (id) @ 25в°c	60A (Tc)
drain to source voltage (vdss)	60V

340 ₽

– +

Бонус: 6.8 !

Бонусная программа

Итого: 340 ₽

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N-канал 60V 60A (Tc) 83W (Tc) сквозное отверстие TO-220AB

Вес и габариты
base product number	IRF60B217 ->
current - continuous drain (id) @ 25в°c	60A (Tc)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	6V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	66nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2230pF @ 25V
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	83W (Tc)
rds on (max) @ id, vgs	9mOhm @ 36A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	StrongIRFETв„ў ->
supplier device package	TO-220AB
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	3.7V @ 50ВµA

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