Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 3,5 A (Ta) 500 мВт (Ta) поверхностный монтаж SOT-323

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 3,5 A (Ta) 500 мВт (Ta) поверхностный монтаж SOT-323

Вес и габариты
base product number	DMN2058 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	3.5A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.8V, 10V
eccn	EAR99
factory pack quantity	3000
fall time	3.3 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	7.7nC @ 10V
htsus	8541.21.0095
id - continuous drain current	3.5 A
input capacitance (ciss) (max) @ vds	281pF @ 10V
manufacturer	DIODES INCORPORATED
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-70, SOT-323
packaging	Cut Tape or Reel
pd - power dissipation	0.7 mW
power dissipation (max)	500mW (Ta)
product category	MOSFET
product type	MOSFET
qg - gate charge	7.7 nC
rds on - drain-source resistance	42 mOhms
rds on (max) @ id, vgs	42mOhm @ 3A, 10V
reach status	REACH Unaffected
rise time	4.9 ns
rohs status	ROHS3 Compliant
subcategory	MOSFETs
supplier device package	SOT-323
technology	MOSFET (Metal Oxide)
transistor polarity	N-Channel
typical turn-off delay time	9.9 ns
typical turn-on delay time	2 ns
vds - drain-source breakdown voltage	20 V
vgs - gate-source voltage	12 V
vgs (max)	В±12V
vgs th - gate-source threshold voltage	400 mV
vgs(th) (max) @ id	1.2V @ 250ВµA

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DMN2058UW-7