Name: DMG3402L-7, Транзистор N-MOSFET, полевой, 30В, 4А, 1,4Вт, SOT23
SKU: DMG3402L-7

Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMDTrans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R

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34 ₽

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Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
continuous drain current (id) @ 25в°c	4A
eccn (us)	EAR99
eu rohs	Compliant
lead shape	Gull-wing
maximum continuous drain current (a)	4
maximum drain source resistance (mohm)	52 10V
maximum drain source voltage (v)	30
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±12
maximum gate threshold voltage (v)	1.4
maximum idss (ua)	1
maximum operating temperature (°c)	150
maximum power dissipation (mw)	1400
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
packaging	Tape and Reel
part status	Active
pcb changed	3
pin count	3
power dissipation-max (ta=25в°c)	1.4W
ppap	No
product category	Power MOSFET
rds on - drain-source resistance	52mО© @ 4A,10V
standard package name	SOT-23
supplier package	SOT-23
transistor polarity	N Channel
typical fall time (ns)	2
typical gate charge @ 10v (nc)	11.7
typical gate charge @ vgs (nc)	11.7 10V
typical input capacitance @ vds (pf)	464 15V
typical rise time (ns)	1.6
typical turn-off delay time (ns)	10.3
typical turn-on delay time (ns)	1.9
vds - drain-source breakdown voltage	30V
вес, г	0.05
vgs - gate-source voltage	1.4V @ 250uA

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