CSD23381F4T

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 12 В 2.3A (Ta) 500 мВт (Ta) для поверхностного монтажа 3-PICOSTAR
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeSurface Mount
operating temperature-55В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 12 В 2.3A (Ta) 500 мВт (Ta) для поверхностного монтажа 3-PICOSTAR
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeSurface Mount
operating temperature-55В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case3-XFDFN
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.21.0095
reach statusREACH Unaffected
supplier device package3-PICOSTAR
pin count3
packagingTape and Reel
product categorySmall Signal
seriesFemtoFETв„ў ->
automotiveNo
eu rohsCompliant
maximum operating temperature (°c)150
mountingSurface Mount
part statusActive
pcb changed3
ppapNo
supplier packagePicoStar
base product numberCSD23381 ->
eccn (us)EAR99
maximum power dissipation (mw)500
minimum operating temperature (°c)-55
configurationSingle
process technologyFemtoFET
Вес и габариты
number of elements per chip1
channel typeP
technologyMOSFET (Metal Oxide)
manufacturer product pagehttp://www.ti.com/general/docs/suppproductinfo.tsp
channel modeEnhancement
maximum continuous drain current (a)2.3
maximum drain source resistance (mohm)175 4.5V
maximum drain source voltage (v)12
maximum gate source leakage current (na)50
maximum gate source voltage (v)8
maximum gate threshold voltage (v)1.2
maximum idss (ua)0.1
typical fall time (ns)7
typical gate charge @ vgs (nc)1.14 4.5V
typical input capacitance @ vds (pf)236 6V
typical rise time (ns)3.9
typical turn-off delay time (ns)18
typical turn-on delay time (ns)4.5
current - continuous drain (id) @ 25в°c2.3A (Ta)
drain to source voltage (vdss)12V
drive voltage (max rds on, min rds on)1.8V, 4.5V
fet typeP-Channel
gate charge (qg) (max) @ vgs1.14nC @ 6V
input capacitance (ciss) (max) @ vds236pF @ 6V
power dissipation (max)500mW (Ta)
rds on (max) @ id, vgs175mOhm @ 500mA, 4.5V
vgs (max)-8V
vgs(th) (max) @ id1.2V @ 250ВµA
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