Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 47A (Tc) 417W (Tc) Поверхностный монтаж D3 [S]

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 47A (Tc) 417W (Tc) Поверхностный монтаж D3 [S]

Вес и габариты
base product number	APT47N60 ->
channel mode:	Enhancement
configuration:	Single
current - continuous drain (id) @ 25в°c	47A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
factory pack quantity: factory pack quantity:	1
fall time:	8 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	260nC @ 10V
htsus	8541.29.0095
id - continuous drain current:	47 A
input capacitance (ciss) (max) @ vds	7015pF @ 25V
manufacturer:	Microchip
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	SMD/SMT
mounting type	Surface Mount
number of channels:	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
package/case:	D3PAK-3
packaging:	Tube
pd - power dissipation:	417 W
power dissipation (max)	417W (Tc)
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	260 nC
rds on - drain-source resistance:	70 mOhms
rds on (max) @ id, vgs	70mOhm @ 30A, 10V
reach status	REACH Unaffected
rise time:	27 ns
rohs status	RoHS Compliant
series	CoolMOSв„ў ->
subcategory:	MOSFETs
supplier device package	D3 [S]
technology	MOSFET (Metal Oxide)
technology:	Si
transistor polarity:	N-Channel
typical turn-off delay time:	110 ns
typical turn-on delay time:	18 ns
vds - drain-source breakdown voltage:	600 V
vgs - gate-source voltage:	-20 V, +20 V
vgs (max)	В±20V
vgs th - gate-source threshold voltage:	3 V
vgs(th) (max) @ id	3.9V @ 2.7mA

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APT47N60SC3G