Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Подробное описание

Вес и габариты
channel mode	Enhancement
configuration	Single
continuous drain current (id) @ 25в°c	115mA

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Вес и габариты
channel mode	Enhancement
configuration	Single
continuous drain current (id) @ 25в°c	115mA
factory pack quantity	3000
fall time	5.6 ns
forward transconductance - min	80 mS
id - continuous drain current	210 mA
manufacturer	DIODES INCORPORATED
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
number of channels	1 Channel
package / case	SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	540 mW
power dissipation-max (ta=25в°c)	370mW
product	MOSFET Small Signal
product category	MOSFET
product type	MOSFET
qg - gate charge	223 pC
rds on - drain-source resistance	7.5О© @ 50mA,5V
rise time	3 ns
series	2N7002
subcategory	MOSFETs
technology	Si
transistor polarity	N Channel
transistor type	1 N-Channel
type	Enhancement Mode Field Effect Transistor
typical turn-off delay time	7.6 ns
typical turn-on delay time	2.8 ns
vds - drain-source breakdown voltage	60V
vgs - gate-source voltage	2.5V @ 250uA
vgs th - gate-source threshold voltage	1 V

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Кнопки

2N7002-7-F