Дата загрузки | 20.02.2024 |
Вес и габариты | |
вес, г | 1 |
Информация о производителе | |
Производитель | ON Semiconductor*** |
Бренд | ON Semiconductor*** |
Основные | |
automotive | No |
частота перехода ft | 40МГц |
collector- base voltage vcbo | 100 V |
collector-emitter saturation voltage | 0.6 V |
collector emitter voltage max | 100В |
collector- emitter voltage vceo max | 100 V |
configuration | Single |
continuous collector current | 4 A |
dc collector/base gain hfe min | 40 |
dc current gain hfe min | 15hFE |
dc усиление тока hfe | 15hFE |
eccn (us) | EAR99 |
emitter- base voltage vebo | 7 V |
eu rohs | Compliant with Exemption |
factory pack quantity | 2500 |
gain bandwidth product ft | 40 MHz |
height | 2.38 mm |
hts | 8541.29.00.95 |
категория | Электронные компоненты/Транзисторы |
количество выводов | 3вывод(-ов) |
lead shape | Gull-wing |
length | 6.73 mm |
максимальная рабочая температура | 150°C |
manufacturer | ON Semiconductor |
material | Si |
maximum base current (a) | 1 |
maximum base emitter saturation voltage (v) | 1.8@200mA@2A |
maximum collector base voltage | 100 V dc |
maximum collector base voltage (v) | 100 |
maximum collector cut-off current (na) | 100 |
maximum collector-emitter saturation voltage (v) | 0.3@50mA@500mA|0.6@100mA@1A |
maximum collector emitter voltage | -100 V |
maximum collector-emitter voltage (v) | 100 |
maximum dc collector current | 4 A |
maximum dc collector current (a) | 4 |
maximum emitter base voltage | 7 V |
maximum emitter base voltage (v) | 7 |
maximum operating frequency | 10 MHz |
maximum operating temperature | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation | 12.5 W |
maximum power dissipation (mw) | 1400 |
military | No |
minimum dc current gain | 15@1A@1V|40@200mA@1V |
minimum operating temperature | -65 C |
minimum operating temperature (°c) | -65 |
монтаж транзистора | Surface Mount |
mounting | Surface Mount |
mounting style | SMD/SMT |
mounting type | Surface Mount |
number of elements per chip | 1 |
operating junction temperature (°c) | -65 to 150 |
package / case | TO-252-3(DPAK) |
package height | 2.38(Max) |
package length | 6.73(Max) |
package type | DPAK(TO-252) |
package width | 6.22(Max) |
packaging | Tape and Reel |
партномер | 8001063947 |
part status | Active |
pcb changed | 2 |
pd - power dissipation | 12.5 W |
pin count | 3 |
полярность транзистора | PNP |
power dissipation | 12.5Вт |
product category | Bipolar Power |
rohs | Details |
series | MJD253 |
standard package name | TO-252 |
стиль корпуса транзистора | TO-252(DPAK) |
supplier package | DPAK |
tab | Tab |
transistor configuration | Single |
transistor polarity | PNP |
transistor type | PNP |
type | PNP |
уровень чувствительности к влажности (msl) | MSL 1-Безлимитный |
Время загрузки | 1:29:25 |
width | 6.22 mm |