MASTERGAN2TR, Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMT

MASTERGAN2TR is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mR and 225 mR for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN2TR features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. It operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package. • Reverse current capability• Zero reverse recovery loss• Dedicated pin for shutdown functionality• Accurate internal timing match• 3.3 V to 15V compatible inputs with hysteresis and pull-down• Overtemperature protection• Bill of material reduction• Very compact and simplified layout• Flexible, easy and fast design