AUIRF7669L2TR, Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH Si 100V 19A Automotive 15-Pin Direct-FET L8 T/R
Информация о производителе | |
Производитель | INFINEON TECHNOLOGIES AG. |
Основные | |
Дата загрузки | 29.04.2024 |
Время загрузки | 6:11:31 |
Бренд | INFINEON TECHNOLOGIES AG. |
Вес и габариты | |
automotive | Yes |
channel mode | Enhancement |
channel mode: | Enhancement |
channel type | N |
configuration | Single Octal Source Dual Drain |
configuration: | Single |
eccn (us) | EAR99 |
eu rohs | Compliant |
factory pack quantity: factory pack quantity: | 4000 |
fall time: | 14 ns |
forward transconductance - min: | 90 S |
id - continuous drain current: | 114 A |
категория | Электронные компоненты/Микросхемы |
lead shape | No Lead |
manufacturer: | Infineon |
material | Si |
maximum continuous drain current (a) | 19 |
maximum drain source resistance (mohm) | 4.4@10V |
maximum drain source voltage (v) | 100 |
maximum gate source leakage current (na) | 100 |
maximum gate source voltage (v) | ±20 |
maximum gate threshold voltage (v) | 5 |
maximum idss (ua) | 5 |
maximum operating temperature: | +175 C |
maximum operating temperature (°c) | 175 |
maximum power dissipation (mw) | 3300 |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style: | SMD/SMT |
number of channels: | 1 Channel |
number of elements per chip | 1 |
package / case: | DirectFET-L8 |
packaging | Tape and Reel |
партномер | 8002239194 |
part status | Active |
pcb changed | 15 |
pd - power dissipation: | 100 W |
pin count | 15 |
ppap | Unknown |
process technology | DirectFET |
product category | Power MOSFET |
product category: | MOSFET |
product type: | MOSFET |
qg - gate charge: | 120 nC |
qualification: | AEC-Q101 |
rds on - drain-source resistance: | 3.5 mOhms |
rise time: | 30 ns |
subcategory: | MOSFETs |
supplier package | Direct-FET L8 |
supplier temperature grade | Automotive |
technology: | Si |
transistor polarity: | N-Channel |
transistor type: | 1 N-Channel |
typical fall time (ns) | 14 |
typical gate charge @ 10v (nc) | 81 |
typical gate charge @ vgs (nc) | 81@10V |
typical input capacitance @ vds (pf) | 5660@25V |
typical rise time (ns) | 30 |
typical turn-off delay time: | 27 ns |
typical turn-off delay time (ns) | 27 |
typical turn-on delay time: | 15 ns |
typical turn-on delay time (ns) | 15 |
vds - drain-source breakdown voltage: | 100 V |
vgs - gate-source voltage: | -20 V, +20 V |
vgs th - gate-source threshold voltage: | 4 V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26