Сравнение

SIHLL110TR-GE3
Цена 190
Информация о производителе
Основные
package / case SOT-223-3
minimum operating temperature -55 C
factory pack quantity 1
manufacturer Vishay
maximum operating temperature +150 C
mounting style SMD/SMT
product category MOSFET
product type MOSFET
subcategory MOSFETs
configuration Single
fall time 18 ns
rise time 47 ns
number of channels 1 Channel
Вес и габариты
technology Si
pd - power dissipation 3.1 W
channel mode Enhancement
rds on - drain-source resistance 540 mOhms
transistor polarity N-Channel
vds - drain-source breakdown voltage 100 V
vgs - gate-source voltage 10 V
id - continuous drain current 1.5 A
typical turn-on delay time 9.3 ns
typical turn-off delay time 16 ns
forward transconductance - min 0.57 S
qg - gate charge 6.1 nC
transistor type 1 N-Channel
vgs th - gate-source threshold voltage 1 V
Меню
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