Сравнение

	AP7384-50V-A, AP7384-50V-A, 1 Low Dropout Voltage, Voltage Regulator 50mA, 5 V 3-Pin, TO-92	IRFP340PBF, Trans MOSFET N-CH 400V 11A 3-Pin(3+Tab) TO-247AC
Цена	0 ₽	470 ₽
Информация о производителе	—	—
Основные	—	—
line regulation	0.05%/V	—
load regulation	0.5 V	—
mounting type	Through Hole	Through Hole
number of outputs	1	—
package type	TO-92	—
minimum operating temperature	-40 °C	—
width	3.8mm	—
pin count	3	3
maximum operating temperature	+125 °C	—
output type	Fixed	—
output voltage	5 V	—
minimum input voltage	3.3 V	—
polarity	Positive	—
maximum input voltage	40 V	—
maximum output current	50mA	—
Вес и габариты	—	—
quiescent current	2.5µA	—
regulator type	Low Dropout Voltage	—
moisture sensitivity level (msl)	—	1 (Unlimited)
operating temperature	—	-55В°C ~ 150В°C (TJ)
package	—	Tube
package / case	—	TO-247-3
rohs status	—	ROHS3 Compliant
вид монтажа	—	Through Hole
категория продукта	—	МОП-транзистор
максимальная рабочая температура	—	+ 150 C
минимальная рабочая температура	—	55 C
подкатегория	—	MOSFETs
размер фабричной упаковки	—	500
тип продукта	—	MOSFET
торговая марка	—	Vishay Semiconductors
упаковка	—	Tube
упаковка / блок	—	TO-247-3
eccn	—	EAR99
htsus	—	8541.29.0095
серия	—	IRFP
supplier device package	—	TO-247-3
длина	—	15.87 mm
product category	—	Power MOSFET
pd - рассеивание мощности	—	150 W
количество каналов	—	1 Channel
automotive	—	No
eu rohs	—	compliant
lead shape	—	Through Hole
maximum operating temperature (°c)	—	150
mounting	—	Through Hole
part status	—	active
pcb changed	—	3
standard package name	—	TO-247
supplier package	—	TO-247AC
base product number	—	IRFP340 ->
eccn (us)	—	ear99
maximum power dissipation (mw)	—	150000
minimum operating temperature (°c)	—	-55
configuration	—	Single
hts	—	8541.10.00.80
package height	—	20.7(Max)
package length	—	15.87(Max)
package width	—	5.21(Max)
технология	—	Si
number of elements per chip	—	1
конфигурация	—	Single
channel type	—	N
technology	—	MOSFET (Metal Oxide)
tab	—	Tab
id - непрерывный ток утечки	—	11 A
qg - заряд затвора	—	62 nC
rds вкл - сопротивление сток-исток	—	550 mOhms
vds - напряжение пробоя сток-исток	—	400 V
vgs - напряжение затвор-исток	—	20 V, + 20 V
vgs th - пороговое напряжение затвор-исток	—	2 V
канальный режим	—	Enhancement
полярность транзистора	—	N-Channel
channel mode	—	Enhancement
maximum continuous drain current (a)	—	11
maximum drain source resistance (mohm)	—	550@10V
maximum drain source voltage (v)	—	400
maximum gate source leakage current (na)	—	100
maximum gate source voltage (v)	—	±20
maximum gate threshold voltage (v)	—	4
maximum idss (ua)	—	25
typical fall time (ns)	—	24
typical gate charge @ 10v (nc)	—	62(Max)
typical gate charge @ vgs (nc)	—	62(Max)@10V
typical input capacitance @ vds (pf)	—	1400@25V
typical rise time (ns)	—	27
typical turn-off delay time (ns)	—	50
typical turn-on delay time (ns)	—	14
current - continuous drain (id) @ 25в°c	—	11A (Tc)
drain to source voltage (vdss)	—	400V
drive voltage (max rds on, min rds on)	—	10V
fet type	—	N-Channel
gate charge (qg) (max) @ vgs	—	62nC @ 10V
input capacitance (ciss) (max) @ vds	—	1400pF @ 25V
power dissipation (max)	—	150W (Tc)
rds on (max) @ id, vgs	—	550mOhm @ 6.6A, 10V
vgs (max)	—	В±20V
vgs(th) (max) @ id	—	4V @ 250ВµA
military	—	No
operating junction temperature (°c)	—	-55 to 150
typical output capacitance (pf)	—	400
maximum diode forward voltage (v)	—	2
maximum positive gate source voltage (v)	—	20
maximum pulsed drain current @ tc=25°c (a)	—	44
minimum gate threshold voltage (v)	—	2
typical gate plateau voltage (v)	—	5.9
typical gate to drain charge (nc)	—	30(Max)
typical gate to source charge (nc)	—	10(Max)
typical reverse recovery charge (nc)	—	2500
typical reverse recovery time (ns)	—	330
typical reverse transfer capacitance @ vds (pf)	—	130@25V