|
|
|
|
|
| Цена |
0 ₽
|
0 ₽
|
0 ₽
|
90 ₽
|
| Информация о производителе |
—
|
—
|
—
|
—
|
| Основные |
—
|
—
|
—
|
—
|
| вес, г |
1
|
—
|
—
|
0.229
|
| factory pack quantity: factory pack quantity: |
2500
|
2500
|
—
|
—
|
| input voltage, max: |
25 V
|
25 V
|
—
|
—
|
| input voltage, min: |
7.5 V
|
7.5 V
|
—
|
—
|
| load regulation: |
20 mV
|
20 mV
|
—
|
—
|
| manufacturer: |
Diodes Incorporated
|
Diodes Incorporated
|
—
|
—
|
| maximum operating temperature: |
+125 C
|
+125 C
|
—
|
—
|
| minimum operating temperature: |
-40 C
|
-40 C
|
—
|
—
|
| mounting style: |
SMD/SMT
|
SMD/SMT
|
—
|
—
|
| number of outputs: |
1 Output
|
1 Output
|
—
|
—
|
| product category: |
Linear Voltage Regulators
|
Linear Voltage Regulators
|
—
|
—
|
| product type: |
Linear Voltage Regulators
|
Linear Voltage Regulators
|
—
|
—
|
| series: |
AS7805
|
AS7805
|
—
|
—
|
| subcategory: |
PMIC-Power Management ICs
|
PMIC-Power Management ICs
|
—
|
—
|
| packaging: |
Reel, Cut Tape, MouseReel
|
Reel, Cut Tape, MouseReel
|
—
|
—
|
| Вес и габариты |
—
|
—
|
—
|
—
|
| moisture sensitive: |
Yes
|
Yes
|
—
|
—
|
| output current: |
1 A
|
1 A
|
—
|
—
|
| output voltage: |
5 V
|
5 V
|
—
|
—
|
| output type: |
Fixed
|
Fixed
|
—
|
—
|
| quiescent current: |
6 mA
|
6 mA
|
—
|
—
|
| polarity: |
Positive
|
Positive
|
—
|
—
|
| line regulation: |
25 mV
|
25 mV
|
—
|
—
|
| package / case: |
TO-252-2
|
TO-252-2
|
—
|
—
|
| максимальная рабочая температура |
—
|
—
|
—
|
150 C
|
| pin count |
—
|
—
|
—
|
8
|
| packaging |
—
|
—
|
—
|
Tape and Reel
|
| product category |
—
|
—
|
—
|
Power MOSFET
|
| количество выводов |
—
|
—
|
—
|
8вывод(-ов)
|
| automotive |
—
|
—
|
—
|
No
|
| eu rohs |
—
|
—
|
—
|
Compliant with Exemption
|
| lead shape |
—
|
—
|
—
|
no lead
|
| maximum operating temperature (°c) |
—
|
—
|
—
|
150
|
| mounting |
—
|
—
|
—
|
surface mount
|
| part status |
—
|
—
|
—
|
active
|
| pcb changed |
—
|
—
|
—
|
8
|
| ppap |
—
|
—
|
—
|
No
|
| standard package name |
—
|
—
|
—
|
SO
|
| supplier package |
—
|
—
|
—
|
PowerPAK SO EP
|
| eccn (us) |
—
|
—
|
—
|
ear99
|
| maximum power dissipation (mw) |
—
|
—
|
—
|
4800
|
| minimum operating temperature (°c) |
—
|
—
|
—
|
-55
|
| configuration |
—
|
—
|
—
|
Single Quad Drain Triple Source
|
| уровень чувствительности к влажности (msl) |
—
|
—
|
—
|
MSL 1-Безлимитный
|
| process technology |
—
|
—
|
—
|
TrenchFET
|
| number of elements per chip |
—
|
—
|
—
|
1
|
| channel type |
—
|
—
|
—
|
N
|
| рассеиваемая мощность |
—
|
—
|
—
|
41.7Вт
|
| power dissipation |
—
|
—
|
—
|
41.7Вт
|
| напряжение истока-стока vds |
—
|
—
|
—
|
40В
|
| полярность транзистора |
—
|
—
|
—
|
N Канал
|
| стиль корпуса транзистора |
—
|
—
|
—
|
SOIC
|
| непрерывный ток стока |
—
|
—
|
—
|
30А
|
| сопротивление во включенном состоянии rds(on) |
—
|
—
|
—
|
0.0085Ом
|
| напряжение измерения rds(on) |
—
|
—
|
—
|
10В
|
| пороговое напряжение vgs |
—
|
—
|
—
|
1.2В
|
| channel mode |
—
|
—
|
—
|
Enhancement
|
| maximum continuous drain current (a) |
—
|
—
|
—
|
15.9
|
| maximum drain source resistance (mohm) |
—
|
—
|
—
|
10.5 10V
|
| maximum drain source voltage (v) |
—
|
—
|
—
|
40
|
| maximum gate source leakage current (na) |
—
|
—
|
—
|
100
|
| maximum gate source voltage (v) |
—
|
—
|
—
|
±20
|
| maximum gate threshold voltage (v) |
—
|
—
|
—
|
2.5
|
| maximum idss (ua) |
—
|
—
|
—
|
1
|
| typical fall time (ns) |
—
|
—
|
—
|
10
|
| typical gate charge @ 10v (nc) |
—
|
—
|
—
|
20.5
|
| typical gate charge @ vgs (nc) |
—
|
—
|
—
|
20.5 10V|9.3 4.5V
|
| typical input capacitance @ vds (pf) |
—
|
—
|
—
|
1160 20V
|
| typical rise time (ns) |
—
|
—
|
—
|
15
|
| typical turn-off delay time (ns) |
—
|
—
|
—
|
18
|
| typical turn-on delay time (ns) |
—
|
—
|
—
|
18
|
| rds on - drain-source resistance |
—
|
—
|
—
|
10.5mО© @ 15A,4.5V
|
| transistor polarity |
—
|
—
|
—
|
N Channel
|
| vds - drain-source breakdown voltage |
—
|
—
|
—
|
40V
|
| vgs - gate-source voltage |
—
|
—
|
—
|
2.5V @ 250uA
|
| continuous drain current (id) @ 25в°c |
—
|
—
|
—
|
30A
|
| power dissipation-max (ta=25в°c) |
—
|
—
|
—
|
4.8W
|
| operating junction temperature (°c) |
—
|
—
|
—
|
-55 to 150
|
| монтаж транзистора |
—
|
—
|
—
|
Surface Mount
|
| typical output capacitance (pf) |
—
|
—
|
—
|
185
|
| maximum continuous drain current on pcb @ tc=25°c (a) |
—
|
—
|
—
|
15.9
|
| maximum diode forward voltage (v) |
—
|
—
|
—
|
1.2
|
| maximum gate resistance (ohm) |
—
|
—
|
—
|
1.6
|
| maximum junction ambient thermal resistance on pcb (°c/w) |
—
|
—
|
—
|
70
|
| maximum positive gate source voltage (v) |
—
|
—
|
—
|
20
|
| maximum power dissipation on pcb @ tc=25°c (w) |
—
|
—
|
—
|
4.8
|
| maximum pulsed drain current @ tc=25°c (a) |
—
|
—
|
—
|
70
|
| minimum gate resistance (ohm) |
—
|
—
|
—
|
0.2
|
| minimum gate threshold voltage (v) |
—
|
—
|
—
|
1.2
|
| typical diode forward voltage (v) |
—
|
—
|
—
|
0.77
|
| typical gate plateau voltage (v) |
—
|
—
|
—
|
2.5
|
| typical gate to drain charge (nc) |
—
|
—
|
—
|
2.5
|
| typical gate to source charge (nc) |
—
|
—
|
—
|
3.1
|
| typical reverse recovery charge (nc) |
—
|
—
|
—
|
19
|
| typical reverse recovery time (ns) |
—
|
—
|
—
|
23
|
| typical reverse transfer capacitance @ vds (pf) |
—
|
—
|
—
|
70 20V
|
| drain source on state resistance |
—
|
—
|
—
|
0.0085Ом
|
