The STW55NM60ND is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
• The worldwide best RDS (ON) amongst the fast recovery diode device
• 100% Avalanche tested
• Low gate input resistance
• High dV/dt and avalanche capabilities