The PBSS4160U, 115 is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability of IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• Smaller required printed-circuit board (PCB) area than for conventional transistors
• PNP complement is PBSS5160U
• 52 Marking code
Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы