The PBSS4120T, 215 is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package provides ultra-low VCEsat and RCEsat parameters. It is suitable for use with the peripheral driver in low supply voltage applications and inductive load drivers.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• PNP complement is PBSS5120T
• 3B Marking code
Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы