Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 20A (Tc) 96W (Tc) поверхностный монтаж 3-PQFN (8x8)

Подробное описание

Основные
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

2 810 ₽

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Итого: 2 810 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 20A (Tc) 96W (Tc) поверхностный монтаж 3-PQFN (8x8)

Основные
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	3-PowerDFN
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	3-PQFN (8x8)
Вес и габариты
technology	GaNFET (Gallium Nitride)
current - continuous drain (id) @ 25в°c	20A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	14nC @ 8V
input capacitance (ciss) (max) @ vds	760pF @ 400V
power dissipation (max)	96W (Tc)
rds on (max) @ id, vgs	130mOhm @ 13A, 8V
vgs (max)	В±18V
vgs(th) (max) @ id	2.6V @ 300ВµA

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