Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 20V 3A (Ta) 1W (Ta) поверхностный монтаж SOT-23F

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

140 ₽

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 20V 3A (Ta) 1W (Ta) поверхностный монтаж SOT-23F

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SOT-23-3 Flat Leads
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	SOT-23F
series	U-MOSVII-H ->
base product number	2SC2229 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	3A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.5V, 4.5V
fet type	N-Channel
gate charge (qg) (max) @ vgs	2nC @ 4V
input capacitance (ciss) (max) @ vds	153pF @ 10V
power dissipation (max)	1W (Ta)
rds on (max) @ id, vgs	71mOhm @ 3A, 4.5V
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 1mA
rds on - drain-source resistance	71mО© @ 3A,4.5V
transistor polarity	N Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 1mA
continuous drain current (id) @ 25в°c	3A
power dissipation-max (ta=25в°c)	1W

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