Вес и габариты | |
collector- base voltage vcbo | -300 V |
collector-emitter saturation voltage | -170 mV |
collector- emitter voltage vceo max | -300 V |
configuration | Single |
continuous collector current | -1 A |
dc collector/base gain hfe min | 90 at-1 A, -10 V |
dc current gain hfe max | 300 at-500 mA, -10 V |
emitter- base voltage vebo | -6 V |
factory pack quantity | 1000 |
gain bandwidth product ft | 85 MHz |
manufacturer | DIODES INCORPORATED |
maximum dc collector current | -1 A |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | SMD/SMT |
package / case | SOT-223-4 |
packaging | Cut Tape or Reel |
pd - power dissipation | 3 W |
product category | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
series | FZT957 |
subcategory | Transistors |
transistor polarity | PNP |